transistor (pnp) features z high voltage z high transition frequency z maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.8 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-5v,i c =-100ma 80 240 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1 v base-emitter voltage v be v ce =-5v,i c =-500ma -1 v transition frequency f t v ce =-5v,i c =-100ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 30 pf classification of h fe rank o y range 80-160 120-240 marking do dy sot-89 1. base 2. collector 3. emitter 2012- 0 willas electronic corp. 2SA1201 sot-89 plastic-encapsulate transistors preliminary
2012- 0 willas electronic corp. 2SA1201 sot-89 plastic-encapsulate transistors outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) preliminary
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